20 May 2016 InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection
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Abstract
We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of 4.47 A/W at 7.9 μm, which is corresponding to the quantum efficiency of 54% at a bias voltage of negative 90 mV, where no anti-reflection coating was used for front-side illumination. At 77K, the photodetector’s 50% cut-off wavelength was ~10 μm. The device shows the detectivity of 2.8x1011 cm.√Hz/W at 77 K, where RxA and dark current density were 119 Ω•cm2 and 4.4x10-4 A/cm2 , respectively, under -90 mV applied bias voltage.
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M. Razeghi, M. Razeghi, A. Haddadi, A. Haddadi, A. M. Hoang, A. M. Hoang, R. Chevallier, R. Chevallier, S. Adhikary, S. Adhikary, A. Dehzangi, A. Dehzangi, } "InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection", Proc. SPIE 9819, Infrared Technology and Applications XLII, 981909 (20 May 2016); doi: 10.1117/12.2228306; https://doi.org/10.1117/12.2228306
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