Paper
20 May 2016 InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection
Author Affiliations +
Abstract
We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of 4.47 A/W at 7.9 μm, which is corresponding to the quantum efficiency of 54% at a bias voltage of negative 90 mV, where no anti-reflection coating was used for front-side illumination. At 77K, the photodetector’s 50% cut-off wavelength was ~10 μm. The device shows the detectivity of 2.8x1011 cm.√Hz/W at 77 K, where RxA and dark current density were 119 Ω•cm2 and 4.4x10-4 A/cm2 , respectively, under -90 mV applied bias voltage.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Razeghi, A. Haddadi, A. M. Hoang, R. Chevallier, S. Adhikary, and A. Dehzangi "InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection", Proc. SPIE 9819, Infrared Technology and Applications XLII, 981909 (20 May 2016); https://doi.org/10.1117/12.2228306
Lens.org Logo
CITATIONS
Cited by 5 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Absorption

Photodetectors

Superlattices

Long wavelength infrared

Quantum efficiency

Indium arsenide

Quantum wells

Back to Top