20 May 2016 Short-wavelength infrared photodetector with InGaAs/GaAsSb superlattice
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Abstract
In this paper, our recent study on InGaAs/GaAsSb Type II photodetector for extended short wavelength infrared detection is reported. The high quality InGaAs/GaAsSb superlattices (SLs) was grown successfully by molecular beam epitaxy. The full width of half maximum of the SLs peak is 39”. Its optical properties were characterized by photoluminescence (PL) at different temperature. The dependences of peak energy on temperature were measured and analyzed. The photodetector with InGaAs/GaAsSb absorption regions has a Quantum Efficiency (QE) product of 12.51% at 2.1um and the 100% cutoff wavelength is at 2.5um, at 300K under zero bias. The dominant mechanism of the dark current is discussed.
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Chuan Jin, Chuan Jin, Qingqing Xu, Qingqing Xu, Chengzhang Yu, Chengzhang Yu, Jianxin Chen, Jianxin Chen, } "Short-wavelength infrared photodetector with InGaAs/GaAsSb superlattice", Proc. SPIE 9819, Infrared Technology and Applications XLII, 98190B (20 May 2016); doi: 10.1117/12.2229020; https://doi.org/10.1117/12.2229020
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