20 May 2016 Long wavelength infrared photodetector using submonolayer quantum dots
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We report on InAs SML QD infrared photodetector performance for long wavelength infrared detection. The device structure consists of InAs SML QDs embedded in InxGa1-xAs quantum well (QW) surrounded by GaAs and AlxGa1- xAs barrier. In order to investigate the structural properties of SML QDs, we took cross-sectional STEM images. We have measured the polarization dependent spectral response of SML-QD based photodetector using various angular inplane and out-plane polarizations. We also report a systematic approach for controlling the intersubband transition energy level in SML QD infrared photodetectors, in order to control the peak wavelength of the device.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Oh Kim, Jun Oh Kim, Zahyun Ku, Zahyun Ku, Augustine Urbas, Augustine Urbas, Sang-Woo Kang, Sang-Woo Kang, Sang Jun Lee, Sang Jun Lee, } "Long wavelength infrared photodetector using submonolayer quantum dots", Proc. SPIE 9819, Infrared Technology and Applications XLII, 98191B (20 May 2016); doi: 10.1117/12.2223569; https://doi.org/10.1117/12.2223569

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