20 May 2016 High operation temperature mid-wavelength interband cascade infrared photodetectors grown on InAs substrate
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Abstract
In recent years, interband cascade detectors (ICIP) based on typer-II superlattice have shown great performance potential at high operation temperature. In this paper, we report our studies on mid-infrared interband cascade photodetectors first grown on InAs substrate. We examined the photo-generated carriers’ transport in ICIP structures by comparing three detectors grown on InAs substrate. The 2-stages ICIP device has demonstrated a high quantum efficiency around 20% at room temperature. The dark current density of the 2-stages ICIP device at -0.05V is as low as 1 nA at 80K, 1 mA at 150K, which is comparable to the state of art PIN superlattice photodetectors with similar cutoff wavelength. The Johnson-noise limited D* reaches 1.64×1014cm.Hz1/2/W at 3.65 μm and 80K, and 4.1×1010cm.Hz1/2/W at 3.8 μm and 200K. The 300 K background limited infrared performance (BLIP) operation temperature is estimated to be over 140 K.
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Yi Zhou, Yi Zhou, Jianxin Chen, Jianxin Chen, Zhicheng Xu, Zhicheng Xu, Li He, Li He, "High operation temperature mid-wavelength interband cascade infrared photodetectors grown on InAs substrate", Proc. SPIE 9819, Infrared Technology and Applications XLII, 98191J (20 May 2016); doi: 10.1117/12.2225131; https://doi.org/10.1117/12.2225131
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