A high temperature operation mid-wavelength 128×128 infrared focal plane arrays (FPA) based on low Al component In1-xAlxSb was presented in this work. InAlSb materials were grown on InSb (100) substrates using MBE technology, which was confirmed by XRD and AFM analyses. We have designed and grown two structures with and without barrier. The pixel of the detector had a conventional PIN structure with a size of 50μmx50μm. The device fabrication process consisted of mesa etching, passivation, metallization and flip-chip hybridization with readout integrated circuit (ROIC), epoxy backfill, lap and polish. Diode resistance, imaging, NETD and operability results are presented for a progression of structures that reduce the diode leakage current as the temperature is raised above 80K. These include addition of a thin region of InAlSb to reduce p-contact leakage current, and construction of the whole device from InAlSb to reduce thermal generation in the active region of the detector. An increase in temperature to 110K, whilst maintaining full 80K performance, is achieved. The I-V curves were measured at different temperature. Quantum efficiency, pixel operability, non-uniformity, and the mean NETD values of the FPAs were measured at 110K. This gives the prospect of significant benefits for the cooling systems, including, for example, use of argon in Joule-Thomson coolers or an increase in the life and/or decrease in the cost, power consumption and cool-down time of Stirling engines by several tens of percent.