20 May 2016 Design of monocrystalline Si/SiGe multi-quantum well microbolometer detector for infrared imaging systems
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Abstract
This paper presents the design, modelling and simulation results of silicon/silicon-germanium (Si/SiGe) multi-quantum well based bolometer detector for uncooled infrared imaging system. The microbolometer is designed to detect light in the long wave length infrared (LWIR) range from 8 to 14 μm with pixel size of 25 x 25 μm. The design optimization strategy leads to achieve the temperature coefficient of resistance (TCR) 4.5%/K with maximum germanium (Ge) concentration of 50%. The design of microbolometer entirely relies on standard CMOS and MEMS processes which makes it suitable candidate for commercial infrared imaging systems.
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Atia Shafique, Atia Shafique, Emre C. Durmaz, Emre C. Durmaz, Barbaros Cetindogan, Barbaros Cetindogan, Melik Yazici, Melik Yazici, Mehmet Kaynak, Mehmet Kaynak, Canan B. Kaynak, Canan B. Kaynak, Yasar Gurbuz, Yasar Gurbuz, } "Design of monocrystalline Si/SiGe multi-quantum well microbolometer detector for infrared imaging systems", Proc. SPIE 9819, Infrared Technology and Applications XLII, 98191T (20 May 2016); doi: 10.1117/12.2224778; https://doi.org/10.1117/12.2224778
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