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20 May 2016 Latest developments of 10μm pitch HgCdTe diode array from the legacy to the extrinsic technology
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Abstract
Sofradir recently presented Daphnis, its latest 10 μm pitch product family. Both Daphnis XGA and HD720 are 10μm pitch mid-wave infrared focal plane array. Development of small pixel pitch is opening the way to very compact products with a high spatial resolution. This new product is taking part in the HOT technology competition allowing reductions in size, weight and power of the overall package. This paper presents the recent developments achieved at Sofradir to make the 10μm pitch HgCdTe focal plane array based on the legacy technology. Electrical and electro-optical characterizations are presented to define the appropriate design of 10μm pitch diode array. The technological tradeoffs are explained to lower the dark current, to keep high quantum efficiency with a high operability above 110K, F/4. Also, Sofradir recently achieved outstanding Modulation Transfer Function (MTF) demonstration at this pixel pitch, which clearly demonstrates the benefit to users of adopting 10μm pixel pitch focal plane array based detectors. Furthermore, the HgCdTe technology has demonstrated an increase of the operating temperature, plus 40K, moving from the legacy to the P-on-n one at a 15μm pitch in mid-wave band. The first realizations using the extrinsic P-on-n technology and the characterizations of diodes with a 10μm pitch neighborhood will be presented in both mid-wave and long-wave bands.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nicolas Péré-Laperne, Jocelyn Berthoz, Rachid Taalat, Laurent Rubaldo, Alexandre Kerlain, Emmanuel Carrère, and Loïc Dargent "Latest developments of 10μm pitch HgCdTe diode array from the legacy to the extrinsic technology", Proc. SPIE 9819, Infrared Technology and Applications XLII, 981920 (20 May 2016); https://doi.org/10.1117/12.2228720
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