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13 May 2016 Advances in AlGaInN laser diode technology for defence and sensing applications
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Abstract
Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and security applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and novel applications including displays and imaging systems, atomic clock and quantum information, free-space and underwater telecom and lidar.
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S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, and G. Targowski "Advances in AlGaInN laser diode technology for defence and sensing applications", Proc. SPIE 9834, Laser Technology for Defense and Security XII, 98340K (13 May 2016); https://doi.org/10.1117/12.2208328
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