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13 May 2016 Advances in AlGaInN laser diode technology for defence and sensing applications
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Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and security applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and novel applications including displays and imaging systems, atomic clock and quantum information, free-space and underwater telecom and lidar.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, and G. Targowski "Advances in AlGaInN laser diode technology for defence and sensing applications", Proc. SPIE 9834, Laser Technology for Defense and Security XII, 98340K (13 May 2016);

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