13 May 2016 Spectroscopic diagnostics of defect and interface effects on carrier dynamics in semiconductor optoelectronics
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Abstract
We use steady-state and time-resolved spectroscopy to evaluate optoelectronic material quality and obtain detailed information about carrier generation, transport, and relaxation in semiconductor devices and test structures. This report focuses on time-resolved and steady-state photoluminescence of III-V reference heterostructures at temperatures between 4K and 300K in order to investigate the mechanisms limiting carrier lifetime and to develop the capability to provide actionable feedback to research-and-development efforts for improvement and optimization of material properties and/or device performance. We combine the results of photoluminescence experiments with model-based analyses and simulations of carrier relaxation to assess the impacts of defects and interface quality on the relaxation dynamics of photo-generated carriers in double heterostructure test vehicles grown by MOCVD and MBE.
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A. C. Scofield, A. C. Scofield, A. I. Hudson, A. I. Hudson, B. L. Liang, B. L. Liang, N. P. Wells, N. P. Wells, D. L. Huffaker, D. L. Huffaker, W. T. Lotshaw, W. T. Lotshaw, "Spectroscopic diagnostics of defect and interface effects on carrier dynamics in semiconductor optoelectronics", Proc. SPIE 9835, Ultrafast Bandgap Photonics, 98350F (13 May 2016); doi: 10.1117/12.2224308; https://doi.org/10.1117/12.2224308
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