Effect of high-optical excitation on the ultrafast electron dynamics in stacked-monolayer graphene samples

Juan A. Castañeda; Henrique Guimarães Rosa; José C. V. Gomes; Eunezio A. Thoroh de Souza; Carlos H. de Brito-Cruz; Hugo L. Fragnito; Lázaro A. Padilha

doi:10.1117/12.2235501

13 May 2016 Effect of high-optical excitation on the ultrafast electron dynamics in stacked-monolayer graphene samples

Juan A. Castañeda, Henrique Guimarães Rosa, José C. V. Gomes, Eunezio A. Thoroh de Souza, Carlos H. de Brito-Cruz, Hugo L. Fragnito, Lázaro A. Padilha

Author Affiliations +

Proceedings Volume 9835, Ultrafast Bandgap Photonics; 983517 (2016) https://doi.org/10.1117/12.2235501
Event: SPIE Defense + Security, 2016, Baltimore, MD, United States

Abstract

We report on transient absorption experiments performed at high optical excitation fluences and used to study the ultrafast dynamics in graphene. We employed a degenerated scheme of pump and probe at 800 nm (1.55 eV). The time resolution of our measurements was limited by the pulse duration ~ 100 fs. The samples were prepared by chemical vapor deposition (CVD) as single-layers on silica and, then staked layer-by-layer in order to make a stack of up to 5 graphene monolayers. We observed saturable absorption (SA) and fluence-dependent relaxation times. We see that the ultrafast carrier dynamics is composed by two decay mechanisms, one with response time of about 200 fs and a slower process of about 1 ps. The fast decay, due to both carrier-carrier and carrier-optical phonon scattering, becomes slower when the density of excited carrier was increased. We implemented a theoretical model and found that both the optical phonon rate emission and the optical phonon lifetime are affect by the pump fluence.

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Juan A. Castañeda, Henrique Guimarães Rosa, José C. V. Gomes, Eunezio A. Thoroh de Souza, Carlos H. de Brito-Cruz, Hugo L. Fragnito, and Lázaro A. Padilha "Effect of high-optical excitation on the ultrafast electron dynamics in stacked-monolayer graphene samples", Proc. SPIE 9835, Ultrafast Bandgap Photonics, 983517 (13 May 2016); https://doi.org/10.1117/12.2235501

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