25 May 2016 Bandgap engineering of graphene decorated with randomly distributed ZnO nano-seed
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Abstract
In this paper, we have experimentally demonstrated the engineering of semi-metal single layer CVD Graphene’s bandgap by decorating with randomly distributed ZnO nano-seed grown by sonication of Zinc acetate dehydrate. The proximity of nanoparticles and Graphene breaks Graphene’s sublattice symmetry and opens-up a bandgap. The 2-D/G ratio of Raman spectroscopy of decorated Graphene along with a peak at 432.39 cm-1 confirmed presence of ZnO on single layer Graphene. The introduced bandgap was measured from the slope of Arrhenius plot. Graphene with significant bandgap introduced by the proposed methods could be used for devices intended for digital and logic applications.
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Chowdhury Al-Amin, Chowdhury Al-Amin, Phani Kiran Vabbina, Phani Kiran Vabbina, Mustafa Karabiyik, Mustafa Karabiyik, Raju Sinha, Raju Sinha, Nezih Pala, Nezih Pala, } "Bandgap engineering of graphene decorated with randomly distributed ZnO nano-seed", Proc. SPIE 9836, Micro- and Nanotechnology Sensors, Systems, and Applications VIII, 98362V (25 May 2016); doi: 10.1117/12.2222835; https://doi.org/10.1117/12.2222835
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