5 May 2016 Development of silicon single-photon avalanche diode at Voxtel Inc.
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Abstract
In this paper we present the results of electrical and optical characterization of silicon single-photon avalanche diode (SPAD) development at Voxel Inc. Measurements are made on a 40 x 40 SPAD array test chip with column readout, inpixel integrated active quenching circuit, and pixel enable/disable circuit and ability to control dead time from 37 ns to 1.5 μs. The pixel pitch is 35 micrometers and includes three different SPADs with active-area diameters of 8 micrometers, 10 micrometers, and 14 micrometers. The realized SPADs have a breakdown voltage of 22.5 V with peak-to-peak variation of less than 36 mV across the array. At room temperature, with 10% over-bias the DCR is only 0.22 Hz/μm2. The SPADs have a sensitive range of 400 – 900 nm, with a peak photon-detection probability of 23% at 500 nm. After-pulsing and crosstalk are within the noise fluctuation of the SPAD and are not significant.
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Vinit Dhulla, Vinit Dhulla, Drake Miller, Drake Miller, Dumitru Mitaru-Berceanu, Dumitru Mitaru-Berceanu, Grigory Kogan, Grigory Kogan, } "Development of silicon single-photon avalanche diode at Voxtel Inc.", Proc. SPIE 9858, Advanced Photon Counting Techniques X, 98580B (5 May 2016); doi: 10.1117/12.2224283; https://doi.org/10.1117/12.2224283
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