5 May 2016 High performance compound semiconductor SPAD arrays
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Abstract
Aggregated compound semiconductor single photon avalanche diode (SPAD) arrays are emerging as a viable alternative to the silicon photomultiplier (SiPM). Compound semiconductors have the potential to surpass SiPM performance, potentially achieving orders of magnitude lower dark count rates and improved radiation hardness. New planar processing techniques have been developed to enable compound semiconductor SPAD devices to be produced with pixel pitches of 11 – 25 microns, with thousands of SPADs per array.
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Eric S. Harmon, Eric S. Harmon, Mikhail Naydenkov, Mikhail Naydenkov, Jared Bowling, Jared Bowling, "High performance compound semiconductor SPAD arrays", Proc. SPIE 9858, Advanced Photon Counting Techniques X, 98580C (5 May 2016); doi: 10.1117/12.2225112; https://doi.org/10.1117/12.2225112
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