17 May 2016 Optimization of material/device parameters of CdTe photovoltaic for solar cells applications
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Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ∼1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).
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Priyalal S. Wijewarnasuriya, Priyalal S. Wijewarnasuriya, } "Optimization of material/device parameters of CdTe photovoltaic for solar cells applications", Proc. SPIE 9865, Energy Harvesting and Storage: Materials, Devices, and Applications VII, 986503 (17 May 2016); doi: 10.1117/12.2229487; https://doi.org/10.1117/12.2229487


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