23 February 1989 Invited Paper Planar InP/InGaAsP Avalanche Photodiode Fabricated With A Novel Photoelectrochemical Etching Technology
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Abstract
Uniform gain is one of the most important characteristics for a high performance avalanche photodiode (APD). In this paper, we present a review of various APD structures and discuss their performance on gain uniformity. Then we focus-on a high speed planar InP/InGaAsP APD with a reduced junction curvature and low p-type doping which prove to be effective to prevent edge-breakdown and provide gain uniformity. This APD was fabricated by Be + implantation through a photoelectrochemically (PEC) etched InGaAs mask and has a planar structure. A dish-shaped opening was etched by PEC etching in the InGaAs layer, which served as an implant mask. The p-n junction was then formed by a beryllium implant. The dish-shaped depression in the mask layer was replicated in the junction profile in the InP layer. The photoresponse of 1.3 pm wavelength scanned across the diode showed a uniform gain as high as 30 without edge or surface breakdown. The device had a 3 dB bandwidth of > 1.2 GHz and demonstrated a 10-9 bit error rate sensitivity (nP) of -35.5 dBm at a data rate of 1.7 Gb/s. The advantages of this device are the simplicity of the epitaxial material structure and the fact that only a single ion implantation is required to fabricate the device.
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G. C. Chi, G. C. Chi, } "Invited Paper Planar InP/InGaAsP Avalanche Photodiode Fabricated With A Novel Photoelectrochemical Etching Technology", Proc. SPIE 0988, Components for Fiber Optic Applications III and Coherent Lightwave Communications, (23 February 1989); doi: 10.1117/12.959740; https://doi.org/10.1117/12.959740
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