CMOS-compatible metamaterial-based wideband mid-infrared absorber for microspectrometer applications

Ehsan Karimi Shahmarvandi; Mohammadamir Ghaderi; N. Pelin Ayerden; Ger de Graaf; Reinoud F. Wolffenbuttel

doi:10.1117/12.2227800

18 April 2016 CMOS-compatible metamaterial-based wideband mid-infrared absorber for microspectrometer applications

Ehsan Karimi Shahmarvandi, Mohammadamir Ghaderi, N. Pelin Ayerden, Ger de Graaf, Reinoud F. Wolffenbuttel

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Proceedings Volume 9883, Metamaterials X; 988309 (2016) https://doi.org/10.1117/12.2227800
Event: SPIE Photonics Europe, 2016, Brussels, Belgium

Abstract

The design of a metamaterial-based absorber for use in a MEMS-based mid-IR microspectrometer is reported. The microspectrometer consists of a LVOF that is aligned with an array of thermopile detectors, which is fabricated on a SiN membrane and coated with the absorber. Special emphasis is put on the CMOS compatible fabrication, which results in an absorber design based on Al disc resonators and an Al background plane that are separated by an SiO2 layer. Wideband operation over the 3-4 μm spectral range is achieved by staggered tuning of four Al disk resonators in one 1.5 x 1.5 μm² unit cell, using four different values of the radius of the Al disk between 0.50 μm and 0.63 μm and an SiO₂ layer thickness of 150 nm. Simulations reveal an average absorption of about 95% with a ±4% ripple at normal incidence, which reduces to about 80% absorption at a 20° incidence angle. The influence of material choice and dimensions on a single absorption peak was studied and the magnetic polariton was identified as the underlying mechanism of absorption.

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Ehsan Karimi Shahmarvandi, Ehsan Karimi Shahmarvandi, Mohammadamir Ghaderi, Mohammadamir Ghaderi, N. Pelin Ayerden, N. Pelin Ayerden, Ger de Graaf, Ger de Graaf, Reinoud F. Wolffenbuttel, Reinoud F. Wolffenbuttel, } "CMOS-compatible metamaterial-based wideband mid-infrared absorber for microspectrometer applications", Proc. SPIE 9883, Metamaterials X, 988309 (18 April 2016); doi: 10.1117/12.2227800; https://doi.org/10.1117/12.2227800

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