21 April 2016 Efficient carrier transfer from graphene quantum dots to GaN epilayers
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The photoluminescence (PL) properties in GaN epilayers were investigated after depositing graphene quantum dots (GQDs) on the GaN surface. A seven-fold enhancement of the PL intensity in GaN was observed in the GQD/GaN composite. On the basis of the PL dynamics, the enhancement of PL in GaN is attributed to the carrier transfer from GQDs to GaN. Such a carrier transfer is caused by the work function difference between GQDs and GaN, evidencing by Kelvin probe measurement. The improved PL is promising toward applications in the GaN-based optoelectronic devices.
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Tzu-Neng Lin, Tzu-Neng Lin, Svette Reina Merden Santiago, Svette Reina Merden Santiago, Chi-Tsu Yuan, Chi-Tsu Yuan, Ji-Lin Shen, Ji-Lin Shen, "Efficient carrier transfer from graphene quantum dots to GaN epilayers", Proc. SPIE 9884, Nanophotonics VI, 98842R (21 April 2016); doi: 10.1117/12.2227459; https://doi.org/10.1117/12.2227459

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