21 April 2016 New design of InGaAs guided-mode resonance photodiode for SWIR low dark current imaging
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We investigate a full-dielectric guided mode resonant photodiode. It has been designed to enhance the absorption by excitation of several resonances in the SWIR domain. The device consists of an InP/InGaAs/InP P-i-N heterojunction containing an active layer as thin as 90 nm on top of a subwavelength lamellar grating and a gold mirror. We successfully compared the electro-optical characterizations of individual pixels with electro-magnetic simulations. In particular, we observe near perfect collection of the photo-carriers and external quantum efficiency (EQE) of up to 71% around 1.55 μm. Moreover, compared with InGaAs resonator state-of-the-art detector, we show a broader spectral response in the 1.2-1.7 μm range, thus paving the way for SWIR low dark current imaging.
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Michaël Verdun, Michaël Verdun, Benjamin Portier, Benjamin Portier, Katarzyna Jaworowicz, Katarzyna Jaworowicz, Julien Jaeck, Julien Jaeck, Christophe Dupuis, Christophe Dupuis, Riad Haidar, Riad Haidar, Fabrice Pardo, Fabrice Pardo, Jean-Luc Pelouard, Jean-Luc Pelouard, } "New design of InGaAs guided-mode resonance photodiode for SWIR low dark current imaging", Proc. SPIE 9884, Nanophotonics VI, 988435 (21 April 2016); doi: 10.1117/12.2227696; https://doi.org/10.1117/12.2227696

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