21 April 2016 Influence of the QD luminescence quantum yield on photocurrent in QD/graphene hybrid structures
Author Affiliations +
Abstract
Photoinduced changes in luminescent and photoelectrical properties of the hybrid structure based on CdSe/ZnS QDs and multilayer graphene nanobelts were studied. It was shown that an irradiation of the structures by 365 nm mercury line in doses up to 23 J led to growth of QD luminescent quantum yield and photocurrent in the QD/graphene structures. This confirms the proximity of the rates of the QD luminescence decay and energy/charge transfer from QDs to graphene, and opens an opportunity to photoinduced control of the photoelectric response of the graphene based hybrid structures with semiconductor quantum dots.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ivan A. Reznik, Yulia A. Gromova, Andrei S. Zlatov, Mikhail A. Baranov, Anna O. Orlova, Stanislav A. Moshkalev, Vladimir G. Maslov, Alexander V. Baranov, Anatoly V. Fedorov, "Influence of the QD luminescence quantum yield on photocurrent in QD/graphene hybrid structures", Proc. SPIE 9884, Nanophotonics VI, 98843A (21 April 2016); doi: 10.1117/12.2227777; https://doi.org/10.1117/12.2227777
PROCEEDINGS
8 PAGES


SHARE
Back to Top