The impact of the semiconductor emitting diode brightness distribution on the energy sensitivity of the opto-electronic system with the optical equisignal zone

Ivan S. Nekrylov; Alexander N. Timofeev; Maksim A. Kleshchenok

doi:10.1117/12.2225611

27 April 2016 The impact of the semiconductor emitting diode brightness distribution on the energy sensitivity of the opto-electronic system with the optical equisignal zone

Ivan S. Nekrylov, Alexander N. Timofeev, Maksim A. Kleshchenok

Author Affiliations +

Proceedings Volume 9889, Optical Modelling and Design IV; 98891R (2016) https://doi.org/10.1117/12.2225611
Event: SPIE Photonics Europe, 2016, Brussels, Belgium

Abstract

The research of the inﬂuence of the LED radiation brightness distribution on the energy sensitivity of optical-electronic systems with optical equal zone is provided. Mathematical modeling of the radiation ﬁeld on a matrix receiver, considering lens spherical aberration, is provided. The possibility of forming a uniform illumination on the photo-detector matrix, changing the shape of the distribution of the brightness of the LED at a predetermined invariable spherical aberration of the lens is provided.

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Ivan S. Nekrylov, Alexander N. Timofeev, and Maksim A. Kleshchenok "The impact of the semiconductor emitting diode brightness distribution on the energy sensitivity of the opto-electronic system with the optical equisignal zone", Proc. SPIE 9889, Optical Modelling and Design IV, 98891R (27 April 2016); https://doi.org/10.1117/12.2225611

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KEYWORDS

Monochromatic aberrations

Light emitting diodes

Diodes

Semiconductors

Modulation

Objectives

Optoelectronics

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