In experiments on a height standard, it could be shown that the setup is capable of recording multiple height steps of 101 nm over a range of 500 m with an accuracy of about 11.5 nm. Further experiments on conductive paths of a micro-electro-mechanical systems (MEMS) pressure sensor demonstrated that the approach is also suitable to precisely characterize nanometer-sized structures on production-relevant components. The main advantage of the proposed measurement approach is the possibility to collect precise height information over a line on a surface without the need for scanning. This feature makes it interesting for a production-accompanying metrology.
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Ch. Taudt, T. Baselt, B. Nelsen, H. Aßmann, A. Greiner, E. Koch, P. Hartmann, "Two-dimensional low-coherence interferometry for the characterization of nanometer wafer topographies," Proc. SPIE 9890, Optical Micro- and Nanometrology VI, 98900R (3 May 2016);