13 May 2016 Ge-rich silicon germanium as a new platform for optical interconnects on silicon
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Abstract
We propose germanium-rich silicon-germanium (SiGe) as a new platform for optical interconnects. The platform viability is experimentally and theoretically investigated through the realization of main building blocks of passive circuitry. Germanium-rich Si1-xGex guiding layer on a graded SiGe layer is used to experimentally show 12μm radius bends by light confinement tuning at a wavelength of 1550nm. As a next step, Mach Zehnder interferometer with 10 dB extinction ratio is demonstrated. High Ge content of the proposed platform allows the coupling with Ge-based active devices, relying on a high quality epitaxial growth. Hence, the integration on Silicon of high speed and low power consumption Ge-rich active components is possible, despite the high lattice mismatch between silicon and germanium.
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Vladyslav Vakarin, Papichaya Chaisakul, Jacopo Frigerio, Andrea Ballabio, Xavier Le Roux, Jean Rene Coudevylle, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini, "Ge-rich silicon germanium as a new platform for optical interconnects on silicon", Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 98910M (13 May 2016); doi: 10.1117/12.2228731; https://doi.org/10.1117/12.2228731
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