13 May 2016 Ge-rich silicon germanium as a new platform for optical interconnects on silicon
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We propose germanium-rich silicon-germanium (SiGe) as a new platform for optical interconnects. The platform viability is experimentally and theoretically investigated through the realization of main building blocks of passive circuitry. Germanium-rich Si1-xGex guiding layer on a graded SiGe layer is used to experimentally show 12μm radius bends by light confinement tuning at a wavelength of 1550nm. As a next step, Mach Zehnder interferometer with 10 dB extinction ratio is demonstrated. High Ge content of the proposed platform allows the coupling with Ge-based active devices, relying on a high quality epitaxial growth. Hence, the integration on Silicon of high speed and low power consumption Ge-rich active components is possible, despite the high lattice mismatch between silicon and germanium.
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Vladyslav Vakarin, Vladyslav Vakarin, Papichaya Chaisakul, Papichaya Chaisakul, Jacopo Frigerio, Jacopo Frigerio, Andrea Ballabio, Andrea Ballabio, Xavier Le Roux, Xavier Le Roux, Jean Rene Coudevylle, Jean Rene Coudevylle, Laurent Vivien, Laurent Vivien, Giovanni Isella, Giovanni Isella, Delphine Marris-Morini, Delphine Marris-Morini, } "Ge-rich silicon germanium as a new platform for optical interconnects on silicon", Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 98910M (13 May 2016); doi: 10.1117/12.2228731; https://doi.org/10.1117/12.2228731

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