13 May 2016 Patterning of graphene on silicon-on-insulator waveguides through laser ablation and plasma etching
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Abstract
We present the use of femtosecond laser ablation for the removal of monolayer graphene from silicon-on-insulator (SOI) waveguides, and the use of oxygen plasma etching through a metal mask to peel off graphene from the grating couplers attached to the waveguides. Through Raman spectroscopy and atomic force microscopy, we show that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method. This loss contribution is measured to be 0.132 dB/μm.
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Jürgen Van Erps, Tymoteusz Ciuk, Iwona Pasternak, Aleksandra Krajewska, Wlodek Strupinski, Steven Van Put, Geert Van Steenberge, Kitty Baert, Herman Terryn, Hugo Thienpont, Nathalie Vermeulen, "Patterning of graphene on silicon-on-insulator waveguides through laser ablation and plasma etching", Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 98910T (13 May 2016); doi: 10.1117/12.2225224; https://doi.org/10.1117/12.2225224
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