13 May 2016 High Q-factor resonant photoluminescence from Ge-on-insulator micro-disks
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Abstract
Micro-disk resonators with high Q-factor have been experimentally demonstrated on germanium-on-insulator (GOI). GOI substrates fabricated by direct wafer bonding show better crystal quality that germanium films directly grown on Si. Sharp resonant peaks with Q-factor around 1000–4000 have been observed from micro-disks fabricated on GOI substrate by low-temperature photoluminescence measurements. The light emission properties against pump laser power and device temperature are also investigated. Our results indicating that GOI micro-disks are promising resonators for low threshold, ultra-compact Ge lasers on Si.
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Xuejun Xu, Hideaki Hashimoto, Keisuke Yoshida, Kentarou Sawano, Takuya Maruizumi, "High Q-factor resonant photoluminescence from Ge-on-insulator micro-disks", Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 98910V (13 May 2016); doi: 10.1117/12.2229555; https://doi.org/10.1117/12.2229555
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