13 May 2016 High Q-factor resonant photoluminescence from Ge-on-insulator micro-disks
Author Affiliations +
Abstract
Micro-disk resonators with high Q-factor have been experimentally demonstrated on germanium-on-insulator (GOI). GOI substrates fabricated by direct wafer bonding show better crystal quality that germanium films directly grown on Si. Sharp resonant peaks with Q-factor around 1000–4000 have been observed from micro-disks fabricated on GOI substrate by low-temperature photoluminescence measurements. The light emission properties against pump laser power and device temperature are also investigated. Our results indicating that GOI micro-disks are promising resonators for low threshold, ultra-compact Ge lasers on Si.
Conference Presentation
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xuejun Xu, Xuejun Xu, Hideaki Hashimoto, Hideaki Hashimoto, Keisuke Yoshida, Keisuke Yoshida, Kentarou Sawano, Kentarou Sawano, Takuya Maruizumi, Takuya Maruizumi, "High Q-factor resonant photoluminescence from Ge-on-insulator micro-disks", Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 98910V (13 May 2016); doi: 10.1117/12.2229555; https://doi.org/10.1117/12.2229555
PROCEEDINGS
6 PAGES + PRESENTATION

SHARE
RELATED CONTENT


Back to Top