13 May 2016 Highly efficient silicon capacitive modulators based on a vertical oxide layer
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Abstract
We present two novel capacitive modulator phase shifter architectures using a vertical oxide. The first structure consists of a vertical oxide slot embedded in a silicon waveguide along the propagation direction. The second structure is based on a sub-wavelength approach, with several periodic vertical oxide layers along the propagation direction. This paper focuses on the design of the modulator devices and the simulation of their performances.
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A. Abraham, D. Perez-Galacho, S. Olivier, D. Marris-Morini, L. Vivien, "Highly efficient silicon capacitive modulators based on a vertical oxide layer", Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 989111 (13 May 2016); doi: 10.1117/12.2227433; https://doi.org/10.1117/12.2227433
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