13 May 2016 Highly efficient silicon capacitive modulators based on a vertical oxide layer
Author Affiliations +
Abstract
We present two novel capacitive modulator phase shifter architectures using a vertical oxide. The first structure consists of a vertical oxide slot embedded in a silicon waveguide along the propagation direction. The second structure is based on a sub-wavelength approach, with several periodic vertical oxide layers along the propagation direction. This paper focuses on the design of the modulator devices and the simulation of their performances.
Conference Presentation
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Abraham, A. Abraham, D. Perez-Galacho, D. Perez-Galacho, S. Olivier, S. Olivier, D. Marris-Morini, D. Marris-Morini, L. Vivien, L. Vivien, } "Highly efficient silicon capacitive modulators based on a vertical oxide layer", Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 989111 (13 May 2016); doi: 10.1117/12.2227433; https://doi.org/10.1117/12.2227433
PROCEEDINGS
6 PAGES + PRESENTATION

SHARE
RELATED CONTENT

Mode competition in photorefractive resonators
Proceedings of SPIE (September 01 1992)
Characterization of high power laser beams with the aid of...
Proceedings of SPIE (November 19 1996)
Applications of optical crystals
Proceedings of SPIE (October 02 1996)

Back to Top