13 May 2016 Hybrid silicon plasmonic-based TE-pass polarization filter for SOI platform
Author Affiliations +
Abstract
In this paper, a novel design of hybrid silicon plasmonic transverse electric (TE) pass polarizer based on silicon-oninsulator (SOI) platform is reported and analyzed. The numerical results are obtained by using full vectorial finite element method. The suggested design depends on gold rods that are injected into the substrate in order to tolerate the function of the device and hence the required polarizing state can be obtained. The proposed SOI TE polarizer can achieve -0.19 dB insertion losses with compact device length of 18 μm. Further, the introduced device is easy for fabrication and is compatible with the standard CMOS fabrication process.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shaimaa I. Azzam, Shaimaa I. Azzam, Mohamed Farhat O. Hameed, Mohamed Farhat O. Hameed, Reham Zagloul, Reham Zagloul, Salah S. A. Obayya, Salah S. A. Obayya, } "Hybrid silicon plasmonic-based TE-pass polarization filter for SOI platform", Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 989124 (13 May 2016); doi: 10.1117/12.2227533; https://doi.org/10.1117/12.2227533
PROCEEDINGS
6 PAGES


SHARE
Back to Top