Optimal parameters of monolithic high-index contrast grating VCSELs

Magdalena Marciniak; Marcin Gebski; Maciej Dems; Tomasz Czyszanowski

doi:10.1117/12.2227692

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28 April 2016 Optimal parameters of monolithic high-index contrast grating VCSELs

Magdalena Marciniak, Marcin Gebski, Maciej Dems, Tomasz Czyszanowski

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Proceedings Volume 9892, Semiconductor Lasers and Laser Dynamics VII; 98921V (2016) https://doi.org/10.1117/12.2227692
Event: SPIE Photonics Europe, 2016, Brussels, Belgium

Abstract

Monolithic High refractive index Contrast Grating (MHCG) allows several-fold size reduction of epitaxial structure of VCSEL and facilitates VCSEL fabrication in all photonic material systems. MHCGs can be fabricated of material which refractive index is higher than 1.75 without the need of the combination of low and high refractive index materials. MHCGs have a great application potential in optoelectronic devices, especially in phosphide- and nitride-based VCSELs, which suffer from the lack of efficient monolithically integrated DBR mirrors. MHCGs can simplify the construction of VCSELs, reducing their epitaxial design to monolithic wafer with carrier confinement and active region inside and etched stripes on both surfaces in post processing. In this paper we present results of numerical analysis of MHCGs as a high reflective mirrors for broad range of refractive indices that corresponds to plethora of materials typically used in optoelectronics. Our calculations base on a three-dimensional, fully vectorial optical model. We investigate the reflectance of the MHCG mirrors of different design as the function of the refractive index and we show the optimal geometrical parameters of MHCG enabling nearly 100% reflectance and broad reflection stop-band. We show that MHCG can be designed based on most of semiconductors materials and for any incident light wavelength from optical spectrum.

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Magdalena Marciniak, Marcin Gebski, Maciej Dems, and Tomasz Czyszanowski "Optimal parameters of monolithic high-index contrast grating VCSELs", Proc. SPIE 9892, Semiconductor Lasers and Laser Dynamics VII, 98921V (28 April 2016); https://doi.org/10.1117/12.2227692

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