27 April 2016 The influence of phenomenological relaxation and finite temperature on the third order nonlinearity of graphene
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Abstract
We investigate the effect of phenomenological relaxation parameters on the third order optical nonlinearity of doped graphene by perturbatively solving the semiconductor Bloch equation. We focus on the contributions of optical transitions around the Dirac points, where the widely used linear dispersion relation is a good approximation. An analytic expression for the nonlinear conductivity at zero temperature can be obtained even if relaxation is included. With this analytic formula as a starting point, we construct the conductivity at finite temperature; and we illustrate the dependence of several nonlinear optical effects, such as third harmonic generation, Kerr effects and two photon absorption, and parametric frequency conversion.
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J. L. Cheng, J. L. Cheng, N. Vermeulen, N. Vermeulen, J. E. Sipe, J. E. Sipe, } "The influence of phenomenological relaxation and finite temperature on the third order nonlinearity of graphene", Proc. SPIE 9894, Nonlinear Optics and its Applications IV, 98941Q (27 April 2016); doi: 10.1117/12.2228300; https://doi.org/10.1117/12.2228300
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