16 August 2016 A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD
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Abstract
Radiation damage effects are problematic for space-based detectors. Highly energetic particles, predominantly from the sun can damage a detector and reduce its operational lifetime. For an image sensor such as a Charge-Coupled Device (CCD) impinging particles can potentially displace silicon atoms from the CCD lattice, creating defects which can trap signal charge and degrade an image through smearing. This paper presents a study of one energy level of the silicon divacancy defect using the technique of single trap-pumping on a proton irradiated n-channel CCD. The technique allows for the study of individual defects at a sub-pixel level, providing highly accurate data on defect parameters. Of particular importance when concerned with CCD performance is the emission time-constant of a defect level, which is the time-scale for which it can trap a signal charge. The trap-pumping technique is a direct probe of individual defect emission time-constants in a CCD, allowing for them to be studied with greater precision than possible with other defect analysis techniques such as deep-level transient spectroscopy on representative materials.
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D. Wood, D. Hall, J. P. D. Gow, A. Holland, "A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD", Proc. SPIE 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII, 99150J (16 August 2016); doi: 10.1117/12.2231682; https://doi.org/10.1117/12.2231682
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