5 August 2016 Simplified charge transfer inefficiency correction in CCDs by trap-pumping
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A major concern when using Charge-Coupled Devices in hostile radiation environments is radiation induced Charge Transfer Inefficiency. The displacement damage from non-ionising radiation incident on the detector creates defects within the silicon lattice, these defects can capture and hold charge for a period of time dependent on the operating temperature and the type of defect, or “trap species”. The location and type of defect can be determined to a high degree of precision using the trap-pumping technique, whereby background charges are input and then shuffled forwards and backwards between pixels many times and repeated using different transfer timings to promote resonant charge-pumping at particular defect sites. Where the charge transfer timings used in the trap-pumping process are equivalent to the nominal CCD readout modes, a simple “trap-map” of the defects that will most likely contribute to charge transfer inefficiency in the CCD array can be quickly generated. This paper describes a concept for how such a “trap-map” can be used to correct images subject to non-ionising radiation damage and provides initial results from an analytical algorithm and our recommendations for future developments.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jason P. D. Gow, Jason P. D. Gow, Neil J. Murray, Neil J. Murray, "Simplified charge transfer inefficiency correction in CCDs by trap-pumping", Proc. SPIE 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII, 99152A (5 August 2016); doi: 10.1117/12.2232706; https://doi.org/10.1117/12.2232706


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