5 August 2016 Simplified charge transfer inefficiency correction in CCDs by trap-pumping
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Abstract
A major concern when using Charge-Coupled Devices in hostile radiation environments is radiation induced Charge Transfer Inefficiency. The displacement damage from non-ionising radiation incident on the detector creates defects within the silicon lattice, these defects can capture and hold charge for a period of time dependent on the operating temperature and the type of defect, or “trap species”. The location and type of defect can be determined to a high degree of precision using the trap-pumping technique, whereby background charges are input and then shuffled forwards and backwards between pixels many times and repeated using different transfer timings to promote resonant charge-pumping at particular defect sites. Where the charge transfer timings used in the trap-pumping process are equivalent to the nominal CCD readout modes, a simple “trap-map” of the defects that will most likely contribute to charge transfer inefficiency in the CCD array can be quickly generated. This paper describes a concept for how such a “trap-map” can be used to correct images subject to non-ionising radiation damage and provides initial results from an analytical algorithm and our recommendations for future developments.
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Jason P. D. Gow, Jason P. D. Gow, Neil J. Murray, Neil J. Murray, "Simplified charge transfer inefficiency correction in CCDs by trap-pumping", Proc. SPIE 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII, 99152A (5 August 2016); doi: 10.1117/12.2232706; https://doi.org/10.1117/12.2232706
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