Single event effects in 0.18um CMOS image sensors

Joseph E. Rushton; Konstantin D. Stefanov; Andrew D. Holland; Henri Bugnet; Frederic Mayer; Matthew Cordrey-Gale; James Endicott

doi:10.1117/12.2235212

5 August 2016 Single event effects in 0.18μm CMOS image sensors

Joseph E. Rushton, Konstantin D. Stefanov, Andrew D. Holland, Henri Bugnet, Frederic Mayer, Matthew Cordrey-Gale, James Endicott

Author Affiliations +

Proceedings Volume 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII; 99152Q (2016) https://doi.org/10.1117/12.2235212
Event: SPIE Astronomical Telescopes + Instrumentation, 2016, Edinburgh, United Kingdom

Abstract

CMOS image sensors are widely used on Earth and are becoming increasingly favourable for use in space. Advantages, such as low power consumption, and ever-improving imaging peformance make CMOS an attractive option. The ability to integrate camera functions on-chip, such as biasing and sequencing, simplifies designing with CMOS sensors and can improve system reliability. One potential disadvantage to the use of CMOS is the possibility of single event effects, such as single event latchup (SEL), which can cause malfunctions or even permanent destruction of the sensor. These single event effects occur in the space environment due to the high levels of radiation incident on the sensor. This work investigates the ocurrence of SEL in CMOS image sensors subjected to heavy-ion irradiation. Three devices are investigated, two of which have triple-well doping implants. The resulting latchup cross-sections are presented. It is shown that using a deep p well on 18 μm epitaxial silicon increases the radiation hardness of the sensor against latchup. The linear energy transfer (LET) threshold for latchup is increased when using this configuration. Our findings suggest deep p wells can be used to increase the radiation tolerance of CMOS image sensors for use in future space missions.

Citation Download Citation

Joseph E. Rushton, Konstantin D. Stefanov, Andrew D. Holland, Henri Bugnet, Frederic Mayer, Matthew Cordrey-Gale, and James Endicott "Single event effects in 0.18μm CMOS image sensors", Proc. SPIE 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII, 99152Q (5 August 2016); https://doi.org/10.1117/12.2235212

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available