16 September 2016 Impact of rapid thermal annealing on dilute nitride (GaAsN)-capped InAs/GaAs quantum dots exhibiting optical emission beyond ~1.5 μm
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Abstract
We report here self-assembled 2.6 ML InAs QDs capped with GaAsN0.021 on GaAs (001) substrate grown under high arsenic overpressure and high power by solid source molecular beam epitaxy. With variation in GaAsN0.021 layer thickness, InAs/GaAs QDs were studied by photoluminescence (PL) spectroscopy. It was found that with InAs dot density of 3 ×1010 cm-2 and 4 nm GaAsN capping layer, emission wavelength was possible to extend beyond 1.5 μm at 300K. Rapid thermal annealing was carried out in nitrogen ambient for 30 sec at temperatures ranging from 700°C to 800°C and a continuous blue-shift for the nitride-capped QDs was observed at 19 K PL spectra, and the sample annealed at 800°C exhibited highest intensity with narrowest full width at half maximum (FWHM). Both the as-grown and annealed samples exhibited asymmetric PL behavior in low energy region at low temperature, associated to the N-related states or cluster of N atoms. The peak emission wavelength at the annealing temperature domain of 750-800°C was remained constant, attributed to no In/Ga diffusion at the interface between the dot and the barrier. Hence, the InAs/GaAs dots capped with 4-nm GaAsN0.021 layer could be implemented in lasers in the temporal range of 750-800°C.
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M. Biswas, M. Biswas, A. Balgarkashi, A. Balgarkashi, S. Singh, S. Singh, N. Shinde, N. Shinde, R. L. Makkar, R. L. Makkar, A. Bhatnagar, A. Bhatnagar, Subhananda Chakrabarti, Subhananda Chakrabarti, Subhananda Chakrabarti, Subhananda Chakrabarti, } "Impact of rapid thermal annealing on dilute nitride (GaAsN)-capped InAs/GaAs quantum dots exhibiting optical emission beyond ~1.5 μm", Proc. SPIE 9919, Nanophotonic Materials XIII, 991914 (16 September 2016); doi: 10.1117/12.2237616; https://doi.org/10.1117/12.2237616
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