26 April 1989 Radiation Induced Loss In Undoped And F-Doped Silica
Author Affiliations +
The radiation resistance of undoped and F-doped synthetic silica is investigated at 840 nm and 1308 nm wavelength. At both wavelengths the F-doped silica shows improved radiation resistance compared to that of the undoped water-free silica. The recovery behaviour after pulsed irradiation of both materials can be devided into three phases with different recovery coefficients. Our results are compared with those from earlier work.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Fabian, H. Fabian, K. F. Klein, K. F. Klein, A. Muhlich, A. Muhlich, K. H. Worner, K. H. Worner, H. Henschel, H. Henschel, O. Kohn, O. Kohn, H. U. Schmidt, H. U. Schmidt, } "Radiation Induced Loss In Undoped And F-Doped Silica", Proc. SPIE 0992, Fiber Optics Reliability: Benign and Adverse Environments II, (26 April 1989); doi: 10.1117/12.960037; https://doi.org/10.1117/12.960037

Back to Top