26 April 1989 Radiation Induced Loss In Undoped And F-Doped Silica
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Abstract
The radiation resistance of undoped and F-doped synthetic silica is investigated at 840 nm and 1308 nm wavelength. At both wavelengths the F-doped silica shows improved radiation resistance compared to that of the undoped water-free silica. The recovery behaviour after pulsed irradiation of both materials can be devided into three phases with different recovery coefficients. Our results are compared with those from earlier work.
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H. Fabian, H. Fabian, K. F. Klein, K. F. Klein, A. Muhlich, A. Muhlich, K. H. Worner, K. H. Worner, H. Henschel, H. Henschel, O. Kohn, O. Kohn, H. U. Schmidt, H. U. Schmidt, } "Radiation Induced Loss In Undoped And F-Doped Silica", Proc. SPIE 0992, Fiber Optics Reliability: Benign and Adverse Environments II, (26 April 1989); doi: 10.1117/12.960037; https://doi.org/10.1117/12.960037
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