Translator Disclaimer
16 September 2016 Terahertz plasmon amplification in RTD-gated HEMTs with a grating-gate
Author Affiliations +
We analyze amplification of terahertz plasmons in a grating-gate semiconductor hetero-structure. The device consists of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT), i.e. a HEMT structure with a double-barrier gate stack enabling resonant tunneling from gate to channel. In these devices, the key element enabling substantial power gain is the coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e. the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as in previous works, enabling amplification with associated power gain >> 30 dB at room temperature.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hugo O. Condori Quispe, Jimy Encomendero, Huili Grace Xing, and Berardi Sensale Rodriguez "Terahertz plasmon amplification in RTD-gated HEMTs with a grating-gate", Proc. SPIE 9920, Active Photonic Materials VIII, 992027 (16 September 2016);

Back to Top