16 September 2016 Ultrafast switching based on field optical bistability in nano-film of semiconductor
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Abstract
Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.
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Vyacheslav A. Trofimov, Vladimir A. Egorenkov, Maria M. Loginova, "Ultrafast switching based on field optical bistability in nano-film of semiconductor", Proc. SPIE 9920, Active Photonic Materials VIII, 992029 (16 September 2016); doi: 10.1117/12.2238861; https://doi.org/10.1117/12.2238861
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