17 September 2016 Enhancement in device performance of hepta-layer coupled InGaAs quantum dot infrared detector by AuGe surface plasmons
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Abstract
In this work, we have studied the effect of AuGe alloy nanoparticles deposition on properties of molecular beam epitaxy grown heptalayer coupled InGaAs 5.25 mono-layer quantum-dots (QDs) samples. AuGe 12 nm film was deposited using electron beam evaporator on these samples which were later annealed at 300 °C to create AuGe nanoparticles. SEM measurement confirms formation of AuGe nanoparticles which support surface Plasmon modes. The PL spectra at 20K confirms maximum enhancement of 53% in intensity of peak at ̴̴ 1123 nm for 300 °C annealed sample in comparison to as-grown (without nanoparticle) sample. Single pixel detectors were fabricated from asgrown and 300°C annealed nanoparticle sample using two level lithography and wet etching process. We have observed two-order and one-order augmentation in responsivity and detectivity from device having nanoparticles compared to the as-grown respectively at 80K. Peak detectivity of 4.2×107cm.Hz 1/2/W at 80K was observed for device having nanoparticles. Around 30% increment in spectral response having peak around 5μm at -1V bias for device having AuGe nanoparticles compared to the as-grown device was observed. The observed enhancement is due to increase light trapping or light scattering into the device by nanoparticles. Demonstration of this plasmonic-based detector will move forward the development of high-performance infrared QDs detectors.
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Sushil Kumar Pandey, Lavi Tyagi, Hemant Ghadi, Harshal Rawool, Subhananda Chakrabarti, "Enhancement in device performance of hepta-layer coupled InGaAs quantum dot infrared detector by AuGe surface plasmons", Proc. SPIE 9921, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XIV, 99212P (17 September 2016); doi: 10.1117/12.2237551; https://doi.org/10.1117/12.2237551
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