16 September 2016 Interactions between confined fields and carriers at interfaces between two-dimensional materials and nanoscale metal architectures
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Abstract
Compact structure-function simulations are needed to examine interactions between confined fields and carriers at interfaces of two-dimensional materials and metal contacts. This work used electron-source discrete dipole simulations of fields confined at metals interfaced with van der Waals materials to compare with measures using scanning transmission electron microscopy (STEM) for energy electron loss spectroscopy (EELS). Bright, dark, and hybrid modes at the interface were mapped at sub-nanometer resolution at resonant energies. Comparing simulation and measurement provided direct, femtosecond measures of confined field dephasing into carriers on topologically insulated surfaces for the first time.
Conference Presentation
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D. Keith Roper, D. Keith Roper, Gregory T. Forcherio, Gregory T. Forcherio, Drew DeJarnette, Drew DeJarnette, } "Interactions between confined fields and carriers at interfaces between two-dimensional materials and nanoscale metal architectures", Proc. SPIE 9924, Low-Dimensional Materials and Devices 2016, 992408 (16 September 2016); doi: 10.1117/12.2238129; https://doi.org/10.1117/12.2238129
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