27 September 2016 Integration of a niobium oxide selector on a tantalum oxide memristor by local oxidation using Joule heating
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Abstract
Memristive devices are two-terminal electrical switches with electrical resistance that depends on a state variable equivalent to electrical charge. In practice, multiple memristive devices are arranged into a crossbar array to form such components as memory and logic. For reliable operation of the crossbar array, electrical current sneak paths need to be eliminated by combining a highly nonlinear component, known as selector, with a memristive device. This ensures the explicit selection of an intended memristive device without disturbing the states of surrounding devices. However, integrating a selector onto a memristive device at the circuit level is not an appealing option for large scale integration. In this paper, a monolithic structure that contains a memristive device and a self-aligned selector is presented. A niobium oxide (NbO2) selector is built directly on a tantalum oxide (TaOx) memristive device by fist depositing an Nb layer on a TaOx memristive device and then forming NbO2 at the Nb/TaOx interface. Discussion will focus on an experimental and theoretical assessment on the electrothermal behavior of the Nb/TaOx structure that results in NbO2/TaOx selector/memristive devices.
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Juan J. Díaz León, Kate J. Norris, John F. Sevic, Nobuhiko P. Kobayashi, "Integration of a niobium oxide selector on a tantalum oxide memristor by local oxidation using Joule heating", Proc. SPIE 9924, Low-Dimensional Materials and Devices 2016, 99240I (27 September 2016); doi: 10.1117/12.2239609; https://doi.org/10.1117/12.2239609
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