16 September 2016 Comparison of heterojunction device parameters for pure and doped ZnO thin films with IIIA (Al or In) elements grown on silicon at room ambient
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Abstract
In this work, pure and IIIA element doped ZnO thin films were grown on p type silicon (Si) with (100) orientated surface by sol-gel method, and were characterized for comparing their electrical characteristics. The heterojunction parameters were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) characteristics at room temperature. The ideality factor (n), saturation current (Io) and junction resistance of ZnO/p-Si heterojunction for both pure and doped (with Al or In) cases were determined by using different methods at room ambient. Other electrical parameters such as Fermi energy level (EF), barrier height (ΦB), acceptor concentration (Na), built-in potential (Φi) and voltage dependence of surface states (Nss) profile were obtained from the C-V measurements. The results reveal that doping ZnO with IIIA (Al or In) elements to fabricate n-ZnO/p-Si heterojunction can result in high performance diode characteristics.
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Ahmet Kaya, Ahmet Kaya, Hilal Cansizoglu, Hilal Cansizoglu, Hasina H. Mamtaz, Hasina H. Mamtaz, Ahmed S. Mayet, Ahmed S. Mayet, M. Saif Islam, M. Saif Islam, "Comparison of heterojunction device parameters for pure and doped ZnO thin films with IIIA (Al or In) elements grown on silicon at room ambient", Proc. SPIE 9924, Low-Dimensional Materials and Devices 2016, 99240U (16 September 2016); doi: 10.1117/12.2239341; https://doi.org/10.1117/12.2239341
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