15 September 2016 TERS at work: 2D materials, from graphene to 2D semiconductors
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Abstract
We report results of TERS characterization of graphene oxide and the 2D semiconductors, MoS2 and WS2. The gap mode TERS signal of these 2D materials becomes dramatically enhanced over wrinkles and creases, as well as over nanopatterns imprinted into flakes using a sharp diamond probe. The resonant Raman signal of MoS2 contains additional peaks normally forbidden by selection rules. TERS maps of few-layer-flakes of this 2D semiconductor show that the spatial distribution of Raman intensity across the flake varies for different peaks, providing interesting insights into the structure of such 2D semiconductors with 10-20 nm spatial resolution.
Conference Presentation
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Andrey Krayev, Sergey Bashkirov, Vasily Gavrilyuk, Vladimir Zhizhimontov, Marc Chaigneau, Maruda Shanmugasundaram, A. Edward Robinson, "TERS at work: 2D materials, from graphene to 2D semiconductors", Proc. SPIE 9925, Nanoimaging and Nanospectroscopy IV, 99250A (15 September 2016); doi: 10.1117/12.2237678; https://doi.org/10.1117/12.2237678
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