15 September 2016 Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surface
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Abstract
We propose to use quantum wires (QWRs) instead of quantum wells (QWs) to improve the internal quantum efficiency of AlGaN UV emitters. Crystal growth of AlGaN on the AlN vicinal (0001) surface with bunched steps creates Al-less AlGaN QWRs at the bunched step edges. Cathodoluminescence maps indicate the formation of the potential minima along the step edges. Photoluminescence spectroscopy reveals that the thermal quenching in the QWRs is suppressed by approximately one order of magnitude, compared with that in conventional (0001) AlGaN/AlN QWs, and the spectra are dominated by the QWR emissions at room temperature. We attribute the superior optical property of the AlGaN QWRs to the enhanced radiative recombination processes.
Conference Presentation
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Minehiro Hayakawa, Minehiro Hayakawa, Yuki Hayashi, Yuki Hayashi, Shuhei Ichikawa, Shuhei Ichikawa, Mitsuru Funato, Mitsuru Funato, Yoichi Kawakami, Yoichi Kawakami, } "Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surface", Proc. SPIE 9926, UV and Higher Energy Photonics: From Materials to Applications, 99260S (15 September 2016); doi: 10.1117/12.2237606; https://doi.org/10.1117/12.2237606
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