15 September 2016 Nanofabrication of low extinction coefficient and high-aspect-ratio Si structures for metaphotonic applications
Author Affiliations +
Abstract
We investigated forming of high refractive index (n), low extinction coefficient (k) of Si dielectrics in visible wavelength ranges. To decrease k, pulsed green laser annealing (GLA) with line beam of a 532-nm wavelength was applied in this study for homogeneous melting. By AFM, XRD and TEM analysis, we examined the defect reduction in various conditions during poly-crystallization. We achieved dielectric nanostructures having optical properties of n>4.2, k<0.06 at 550 nm wavelength and fine pitches down to 40 nm (aspect ratio 3:1) and 130 nm (aspect ratio 7:1) with ±5% size accuracy. Finally, we realized optical metasurfaces for optical band filters, flat lens and beam deflectors.
Conference Presentation
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
JeongYub Lee, Byonggwon Song, Jaekwan Kim, Chang-Won Lee, Seunghoon Han, Chan-Wook Baik, Heejeong Jeong, Yongsung Kim, Chang Seung Lee, "Nanofabrication of low extinction coefficient and high-aspect-ratio Si structures for metaphotonic applications", Proc. SPIE 9927, Nanoengineering: Fabrication, Properties, Optics, and Devices XIII, 992708 (15 September 2016); doi: 10.1117/12.2235523; https://doi.org/10.1117/12.2235523
PROCEEDINGS
11 PAGES + PRESENTATION

SHARE
Back to Top