15 September 2016 Nanofabrication of low extinction coefficient and high-aspect-ratio Si structures for metaphotonic applications
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Abstract
We investigated forming of high refractive index (n), low extinction coefficient (k) of Si dielectrics in visible wavelength ranges. To decrease k, pulsed green laser annealing (GLA) with line beam of a 532-nm wavelength was applied in this study for homogeneous melting. By AFM, XRD and TEM analysis, we examined the defect reduction in various conditions during poly-crystallization. We achieved dielectric nanostructures having optical properties of n>4.2, k<0.06 at 550 nm wavelength and fine pitches down to 40 nm (aspect ratio 3:1) and 130 nm (aspect ratio 7:1) with ±5% size accuracy. Finally, we realized optical metasurfaces for optical band filters, flat lens and beam deflectors.
Conference Presentation
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JeongYub Lee, JeongYub Lee, Byonggwon Song, Byonggwon Song, Jaekwan Kim, Jaekwan Kim, Chang-Won Lee, Chang-Won Lee, Seunghoon Han, Seunghoon Han, Chan-Wook Baik, Chan-Wook Baik, Heejeong Jeong, Heejeong Jeong, Yongsung Kim, Yongsung Kim, Chang Seung Lee, Chang Seung Lee, "Nanofabrication of low extinction coefficient and high-aspect-ratio Si structures for metaphotonic applications", Proc. SPIE 9927, Nanoengineering: Fabrication, Properties, Optics, and Devices XIII, 992708 (15 September 2016); doi: 10.1117/12.2235523; https://doi.org/10.1117/12.2235523
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