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4 November 2016 Rare earth doped III-nitride semiconductors for spintronic and optoelectronic applications (Conference Presentation)
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Abstract
Since last four decades the information and communication technologies are relying on the semiconductor materials. Currently a great deal of attention is being focused on adding spin degree-of-freedom into semiconductor to create a new area of solid-state electronics, called spintronics. In spintronics not only the current but also its spin state is controlled. Such materials need to be good semiconductors for easy integration in typical integrated circuits with high sensitivity to the spin orientation, especially room temperature ferromagnetism being an important desirable property. GaN is considered to be the most important semiconductor after silicon. It is widely used for the production of green, blue, UV, and white LEDs in full color displays, traffic lights, automotive lightings, and general room lighting using white LEDs. GaN-based systems also show promise for microwave and high power electronics intended for radar, satellite, wireless base stations and spintronic applications. Rare earth (Yb, Eu, Er, and Tm) doped GaN shows many interesting optoelectronic and magnetoptic properties e. g. sharp emission from UV through visible to IR, radiation hardness, and ferromagnetism. The talk will be focused on fabrication, optoelectronic (photoluminescence, cathodeluminescence, magnetic, and x-ray photoelectron spectroscopy) properties of some rare earth doped GaN and InGaN semiconductor nanostructures grown by plasma assisted molecular beam epitaxy (MBE) and future applications.
Conference Presentation
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ratnakar Palai "Rare earth doped III-nitride semiconductors for spintronic and optoelectronic applications (Conference Presentation)", Proc. SPIE 9931, Spintronics IX, 993104 (4 November 2016); https://doi.org/10.1117/12.2238809
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