Discussions on switching mechanism for ultimate reduction in energy consumption for STT-MRAM

H. Yoda; N. Shimomura

doi:10.1117/12.2239771

26 September 2016 Discussions on switching mechanism for ultimate reduction in energy consumption for STT-MRAM

H. Yoda, N. Shimomura

Proceedings Volume 9931, Spintronics IX; 993117 (2016) https://doi.org/10.1117/12.2239771
Event: SPIE Nanoscience + Engineering, 2016, San Diego, California, United States

Abstract

Critical switching current, ICsw, of STT (Spin Transfer Torque)-MRAM has been reduced by several orders with PMA (Perpendicular Magnetic Anisotropy)-MTJs and the state-of-the-art writing-charge, Q_w, becomes the order of 100fC. With the small Q_w, MRAM starts to save energy consumption even for mobile applications. The key to the Qw reduction is a development of MTJs having higher writing-efficiency. Especially coherent switching of storage-layer magnetization was found to be the root key to the high efficiency.

Citation Download Citation

H. Yoda and N. Shimomura "Discussions on switching mechanism for ultimate reduction in energy consumption for STT-MRAM", Proc. SPIE 9931, Spintronics IX, 993117 (26 September 2016); https://doi.org/10.1117/12.2239771

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