26 September 2016 Discussions on switching mechanism for ultimate reduction in energy consumption for STT-MRAM
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Abstract
Critical switching current, ICsw, of STT (Spin Transfer Torque)-MRAM has been reduced by several orders with PMA (Perpendicular Magnetic Anisotropy)-MTJs and the state-of-the-art writing-charge, Qw, becomes the order of 100fC. With the small Qw, MRAM starts to save energy consumption even for mobile applications. The key to the Qw reduction is a development of MTJs having higher writing-efficiency. Especially coherent switching of storage-layer magnetization was found to be the root key to the high efficiency.
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H. Yoda, H. Yoda, N. Shimomura, N. Shimomura, "Discussions on switching mechanism for ultimate reduction in energy consumption for STT-MRAM", Proc. SPIE 9931, Spintronics IX, 993117 (26 September 2016); doi: 10.1117/12.2239771; https://doi.org/10.1117/12.2239771
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